# Created by Octave 3.6.3, Wed Jan 09 09:29:40 2013 UTC <builder@localhost.localdomain>
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Mshichmanhodgesmosfet


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 -- Function File: [A,B,C]= Mshichmanhodgesmosfet (STRING, PARAMETERS,
          PARAMETERNAMES, EXTVAR,INTVAR,T)
     SBN file implementing Schichman-Hodges MOSFETs model.

     STRING is used to select among models. Possible models are:

       1. STRING = NMOS (Simplified Shichman-Hodges n-MOSFET)

       2. STRING = PMOS (Simplified Shichman-Hodges p-MOSFET)

     Parameters for all the above models are:
        * rd     -> parasitic resistance between drain and source

        * W      -> MOSFET width

        * L      -> channel length

        * mu0    -> reference value for mobility

        * Vth    -> threshold voltage

        * Cox    -> oxide capacitance

        * Cgs    -> gate-source capacitance

        * Cgd    -> gate-drain capacitance

        * Cgb    -> gate-bulk capacitance

        * Csb    -> source-bulk capacitance

        * Cdb    -> drain-bulk capacitance

        * Tshift -> shift for reference temperature on MOSFETs
     See the `IFF file format specifications' for details about the
     output structures.

     See also: prs_iff, asm_initialize_system, asm_build_system





# name: <cell-element>
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SBN file implementing Schichman-Hodges MOSFETs model.





